FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 1 august 2011 FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm 30 v, 49 a, 1.9 m features ? dual cool tm top side cooling pqfn package ? max r ds(on) = 1.9 m at v gs = 10 v, i d = 30 a ? max r ds(on) = 2.7 m at v gs = 4.5 v, i d = 26 a ? high performance technology for extremely low r ds(on) ? syncfet schottky body diode ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process. advancements in both silicon and dual cool tm package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance by extremely low junction-to-ambient thermal resistance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? telecom secondary side rectification ? high end server/workstation vcore low side 4 3 2 1 5 6 7 8 s s s g d d d d bottom top pin 1 s g s s d d d d power 56 mosfet maximum ratings t a = 25c unless otherwise noted thermal charac teristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 49 a -continuous (silicon limited) t c = 25 c 179 -continuous t a = 25 c (note 1a) 34 -pulsed 200 e as single pulse avalanche energy (note 3) 144 mj dv/dt peak diode recovery dv/dt (note 5) 1.8 v/ns p d power dissipation t c = 25 c 89 w power dissipation t a = 25 c (note 1a) 3.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (top source) 2.7 c/w r jc thermal resistance, junction to case (bottom drain) 1.4 r ja thermal resistance, junction to ambient (note 1a) 38 r ja thermal resistance, junction to ambient (note 1b) 81 r ja thermal resistance, junction to ambient (note 1i) 16 r ja thermal resistance, junction to ambient (note 1j) 23 r ja thermal resistance, junction to ambient (note 1k) 11 device marking device package reel size tape width quantity 3006s FDMS3006SDC dual cool tm power 56 13?? 12 mm 3000 units
FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 16 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.7 3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c -5 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 30 a 1.3 1.9 m v gs = 4.5 v, i d = 26 a 1.9 2.7 v gs = 10 v, i d = 30 a, t j = 125 c 1.8 2.7 g fs forward transconductance v ds = 5 v, i d = 30 a 167 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 4305 5725 pf c oss output capacitance 1630 2170 pf c rss reverse transfer capacitance 102 155 pf r g gate resistance 0.8 t d(on) turn-on delay time v dd = 15 v, i d = 30 a, v gs = 10 v, r gen = 6 16 29 ns t r rise time 5.9 12 ns t d(off) turn-off delay time 39 62 ns t f fall time 3.5 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 30 a 57 80 nc q g total gate charge v gs = 0 v to 4.5 v 26 36 nc q gs gate to source gate charge 12 nc q gd gate to drain ?miller? charge 5.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.4 0.8 v v gs = 0 v, i s = 30 a (note 2) 0.8 1.2 t rr reverse recovery time i f = 30 a, di/dt = 300 a/ s 38 61 ns q rr reverse recovery charge 58 93 nc
FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 3 thermal characteristics r ja thermal resistance, junction to case (top source) 2.7 c/w r ja thermal resistance, junction to case (bottom drain) 1.4 r ja thermal resistance, junction to ambient (note 1a) 38 r ja thermal resistance, junction to ambient (note 1b) 81 r ja thermal resistance, junction to ambient (note 1c) 27 r ja thermal resistance, junction to ambient (note 1d) 34 r ja thermal resistance, junction to ambient (note 1e) 16 r ja thermal resistance, junction to ambient (note 1f) 19 r ja thermal resistance, junction to ambient (note 1g) 26 r ja thermal resistance, junction to ambient (note 1h) 61 r ja thermal resistance, junction to ambient (note 1i) 16 r ja thermal resistance, junction to ambient (note 1j) 23 r ja thermal resistance, junction to ambient (note 1k) 11 r ja thermal resistance, junction to ambient (note 1l) 13 notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. c. still air, 13x8.1x5.8mm aluminum heat sink, 1 in2 pad of 2 oz copper d. still air, 13x8.1x5.8mm aluminum heat sink, minimum pad of 2 oz copper e. still air, 25x25x10mm aavid thermalloy part#10-6327-01 heat sink, 1 in2 pad of 2 oz copper f. still air, 25x25x10mm aavid thermalloy part#10-6327-01 heat sink, minimum pad of 2 oz copper g. 200fpm airflow, no heat sink,1 in2 pad of 2 oz copper h. 200fpm airflow, no heat sink, minimum pad of 2 oz copper i. 200fpm airflow, 13x8.1x5.8 mm aluminum heat sink, 1 in2 pad of 2 oz copper j. 200fpm airflow, 13x8.1x5.8mm aluminum heat sink, minimum pad of 2 oz copper k. 200fpm airflow, 25x25x10mm aavid thermalloy part#10-6327-01 heat sink, 1 in2 pad of 2 oz copper l. 200fpm airflow, 25x25x10mm aavid thermalloy part#10-6327-01 heat sink, minimum pad of 2 oz copper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 144 mj is based on starting t j = 25 c, l = 1 mh, i as = 17 a, v dd = 27 v, v gs = 10 v. 100% test at l = 0. 1 mh, i as = 39 .2 a. 4. as an n-ch device, the negative vgs rating is for low du ty cycle pulse ocurrence only. no continuous rating is implied. 5. i sd 30 a, di/dt 165 a/ s, v dd bv dss , starting t j = 25 o c. a. 38 c/w when mounted on a 1 in 2 pad of 2 oz copper b. 81 c/w when mounted on a minimum pad of 2 oz copper
FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 4 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.00.51.01.52.02.5 0 50 100 150 200 v gs = 3.5 v v gs = 10 v v gs = 3 v v gs = 4 v pulse duration = 80 s duty cycle = 0.5% max v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 50 100 150 200 0 2 4 6 v gs = 4 v v gs = 4.5 v normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 3.5 v v gs = 3 v pulse duration = 80 s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 30 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 2 4 6 8 t j = 125 o c i d = 30 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1234 0 50 100 150 200 t j = 125 o c v ds = 5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 5 figure 7. 02 04 06 0 0 2 4 6 8 10 i d = 30 a v dd = 15 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 10 100 1000 6000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 500 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 50 100 150 200 limited by package r jc = 1.4 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 300 100 ms 10 s 10 ms 100 s dc 1 s 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r ja = 81 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 1 10 100 1000 5000 p ( pk ) , peak transient power (w) t, pulse width (sec) single pulse r ja = 81 o c/w t a = 25 o c s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 6 figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.0005 0.001 0.01 0.1 1 2 single pulse r ja = 81 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 7 syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 14 shows the reverse recovery characteristic of the fdms3006s. schottky barrier diodes exhibit significant leakage at high tem - perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) figure 14. fdms3006s syncfet body diode reverse recovery characteristic figure 15. syncfet body diode reverse leakage versus drain-source voltage 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) 0 50 100 150 200 250 -5 0 5 10 15 20 25 30 35 didt = 300 a/ p s current (a) time (ns)
FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm ?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 8 dimensional outlin e and pad layout
?2011 fairchild semiconductor corporation FDMS3006SDC rev.c www.fairchildsemi.com 9 FDMS3006SDC n-channel dual cool tm power trench ? syncfet tm trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product developm ent. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i55
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